utc b c p 6 8 npn epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r207-008,b npn medium power transistor features * high current (max. 1 a) * low voltage (max. 20 v) * complementary to utc bcp69 applications * general purpose switching and amplification under high current conditions. sot-223 1 1: base 2: collector 3: emitter absolute maximum ratings (ta = 25 ) parameter symbol ratings unit collector-base voltage (open emitter) v cbo 32 v collector-emitter voltage(open base) v ceo 20 v emitter-base voltage(open collector) v ebo 5 v collector current (dc) i c 1 a peak collector current i cm 2 a peak base current i bm 200 ma total power dissipation, ta 25 p tot 1.37 w operating ambient temperature ta -65 ~ +150 junction temperature t j 150 storage temperature t stg -65 ~ +150 thermal characteristics parameter symbol test conditions ratings unit thermal resistance from junction to ambient r th j-a note 1 91 k/w thermal resistance from junction to soldering point r th j-s 10 k/w note 1: device mounted on a printed-circuit board, singl e-sided copper, tinplated, mounting pad for collector 1 cm 2 . for other mounting conditions, see ?thermal considerations for sot223 in the general part of associated handbook?.
utc b c p 6 8 npn epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r207-008,b electrical characteristics (t j = 25 , unless otherwise specified.) parameter symbol test conditions min typ max unit i e = 0, v cb = 25v 100 na collector cut-off current i cbo i e = 0, v cb = 25v, t j = 150 10 a emitter cut-off current i ebo i c = 0, v eb =5v 100 na i c = 5ma, v ce = 10v 50 i c = 500ma, v ce = 1v 85 375 dc current gain i c = 1a, v ce = 1v 60 dc current gain (BCP68-25) h fe i c = 500ma, v ce = 1v 160 375 collector-emitter saturation voltage v cesat i c = 1a, i b = 100ma 500 mv i c = 5ma, v ce = 10v 620 mv base-emitter voltage v be i c = 1a, v ce = 1v 1 v collector capacitance c c i e = i e = 0, v cb = 5v, f = 1mhz 38 pf transition frequency f t i c = 10ma, v ce = 5v, f = 100mhz 40 mhz dc current gain ratio of the complementary pairs h fe1 h fe2 |i c | = 0.5a, |v ce | = 1v 1.6 0 300 200 h fe 150 100 1 -10 -1 10 10 2 10 3 10 4 i c (ma) v ce = 1v dc current gain (typical values) 250 50 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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